MCD255-18IO1 phase leg thyristor \ diode module 3 1 2 5 4 part number MCD255-18IO1 backside: isolated tav t v v 1.08 rrm 250 1800 = v = v i = a 2x features / advantages: applications: package: international standard package direct copper bonded al2o3-ceramic with copper base plate planar passivated chip isolation voltage 3600 v~ keyed gate/cathode twin pins motor control, softstarter power converter heat and temperature control for industrial furnaces and chemical processes lighting control solid state switches y1 industry standard outline rohs compliant soldering pins for pcb mounting base plate: copper internally dcb isolated advanced power cycling isolation voltage: v~ 3600 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact your local sales offi ce. should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20170116e data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MCD255-18IO1 v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i v i a v t 1.14 r 0.14 k/w min. 250 v v 1 t = 25c vj t = c vj ma 40 v = v t = 25c vj i = a t v t = c c 85 p tot 820 w t = 25c c 300 1800 forward voltage drop total power dissipation conditions unit 1.36 t = 25c vj 140 v t0 v 0.80 t = c vj 140 r t 0.68 m ? v 1.08 t = c vj i = a t v 300 1.33 i = a 600 i = a 600 threshold voltage slope resistance for power loss calculation only ma 125 v v 1800 t = 25c vj i a 450 p gm w t = 30 s 120 max. gate power dissipation p t = c c 140 w t = 60 p p gav w 20 average gate power dissipation c j 438 junction capacitance v = v400 t = 25c f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 140 i2t t = 45c value for fusing t = c 140 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t = c vj 140 9.20 9.94 305.8 296.7 ka ka ka ka 7.82 8.45 423.2 410.6 1800 500 s rms forward current t(rms) tav 180 sine average forward current (di/dt) cr a/s 100 repetitive, i = t vj = 140 c; f = 50 hz critical rate of rise of current v gt gate trigger voltage v = 6 v t = c25 (dv/dt) t = 140c critical rate of rise of voltage a/s 500 v/s t = s; i a; v = ? v r = ; method 1 (linear voltage rise) vj d vj 860 a t pg = 1 di /dt a/s; g = 1 drm cr v = ? v drm gk 1000 2 v t = c -40 vj i gt gate trigger current v = 6 v t = c25 d vj 150 ma t = c -40 vj 3 v 220 ma v gd gate non-trigger voltage t = c vj 0.25 v i gd gate non-trigger current 10 ma v = ? v d drm 140 latching current t = c vj 200 ma i l 25 t s p = 30 i a; g = 0.45 di /dt a/s g = 0.45 holding current t = c vj 150 ma i h 25 v = 6 v d r = gk gate controlled delay time t = c vj 2 s t gd 25 i a; g = 1 di /dt a/s g = 1 v = ? v d drm turn-off time t = c vj 200 s t q di/dt = a/s 10 dv/dt = v/s 50 v = r 100 v; i a; t = 300 v = ? v drm t s p = 200 non-repet., i = 250 a t 125 r thch 0.040 thermal resistance case to heatsink k/w rectifier 1900 rrm/drm rsm/dsm max. non-repetitive reverse/forward blocking voltag e max. repetitive reverse/forward blocking voltage r/d reverse current, drain current tt r/d r/d 200 ixys reserves the right to change limits, condition s and dimensions. 20170116e data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MCD255-18IO1 ratings part number yywwaa date code (dc) production index (pi) lot.no: xxxxxx data matrix: part no. (1-19), dc + pi (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) circuit package t op c m d nm 7 mounting torque 4.5 t vj c 140 virtual junction temperature -40 weight g 680 symbol definition typ. max. min. conditions operation temperature unit m t nm 13 terminal torque 11 v v t = 1 second v t = 1 minute isolation voltage mm mm 16.0 16.0 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 600 a per terminal 125 -40 terminal to terminal y1 delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol MCD255-18IO1 461830 box 3 MCD255-18IO1 standard 3600 isol t stg c 125 storage temperature -40 3000 threshold voltage v 0.8 m ? v 0 max r 0 max slope resistance * 0.5 equivalent circuits for simulation t = vj i v 0 r 0 thyristor 140 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20170116e data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MCD255-18IO1 optional accessories for modules keyed gate/cathode twin plugs with wire length = 35 0 mm, gate = white, cathode = red type zy 180l (l = left for pin pair 4/5) type zy 180r (r = right for pin pair 6/7) 2.8 x 0.8 10 2 49 45 43 1 2 3 7 6 5 4 80 92 115 6.2 20 22.5 35 28.5 50 38 5 18 ul 758, style 3751 52 +0 -1,4 32 +0 -1,9 15 1 3x m8 3 1 2 5 4 outlines y1 ixys reserves the right to change limits, condition s and dimensions. 20170116e data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MCD255-18IO1 t c [c] t [s] 0.001 0.01 0.1 1 0 2000 4000 6000 8000 10000 01 1 10 4 10 5 10 6 0 25 50 75 100 125 150 0 100 200 300 400 i tsm [a] i tavm [a] 0 25 50 75 100 125 150 0 100 200 300 0 100 200 300 400 500 0 25 50 75 100 125 150 0 200 400 600 0 500 1000 1500 2000 r thka k/w 0.03 0.06 0.1 0.15 0.2 0.3 0.4 circuit b6 3xmcd255 3xmcc255 or 180 sin 120 60 30 dc 180 sin 120 60 30 dc i 2 dt [a 2 s] t [ms] i tavm [a] p tot [w] t a [c] p tot [w] i davm t ]a[ a [c] fig. 1 surge overload current i t(f)sm : crest value, t: duration fig. 2 i 2 dt versus time fig. 3 max. forward current at case temperature fig. 4 power dissipation versus on-state current and ambient temperature (per thyristor or diode) fig. 6 three phase rectifier bridge: power dissipation vs. direct output current and ambient temperature t vj = 45c r thka k/w 0.1 0.2 0.3 0.4 0.6 0.8 1.0 6 5 4 3 1 limit typ. v g [v] 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.1 1 10 0.01 0.1 1 10 1 10 100 2 4: p gm = 20 w 5: p gm = 60 w 6: p gm = 120 w i g [a] t gd [s] i g [a] fig. 5 surge overload current i t(f)sm : crest value, t: duration fig. 7 gate trigger delay time t vj = 25c 3: i gt , t vj = -40c 2: i gt , t vj = 25c 1: i gt , t vj = 140c i gd , t vj = 140c 80 % v rrm t vj = 45c 50 hz t vj = 140c t vj = 140c thyristor ixys reserves the right to change limits, condition s and dimensions. 20170116e data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MCD255-18IO1 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 0.20 0.25 0.30 p tot [w] 0 25 50 75 100 125 150 0 100 200 300 400 500 0 500 1000 1500 2 000 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 0.20 0.25 dc 180 120 60 30 r thka k/w 0.03 0.06 0.1 0.15 0.2 0.3 0.4 circuit w3 3xmcd255 3xmcc255 or i rms [a] t a [c] t [s] z thjc [k/w] t [s] z thjk [k/w] fig. 8 three phase ac-controller: power dissipation versus r ms output current and ambient temperature fig. 9 transient thermal impedance junction to case (per t hyristor/diode) fig. 10 transient thermal impedance junction to heatsink ( per thyristor/diode) dc 180 120 60 30 constants for z thjc calculation: i r thi [k/w] t i [s] 1 0.0066 0.00054 2 0.0358 0.098 3 0.0831 0.54 4 0.0129 12 r thjc for various conduct. angles d: d dc 180 120 60 30 r thjc [k/w] 0.139 0.148 0.156 0.176 0.214 t i [s] 0.00054 0.098 0.54 12 12 constants for z thjk calculation: i r thi [k/w] 1 0.0066 2 0.0358 3 0.0831 4 0.0129 5 0.04 r thjk for various conduct. angles d: d dc 180 120 60 30 r thjk [k/w] 0.179 0.188 0.196 0.216 0.254 rectifier ixys reserves the right to change limits, condition s and dimensions. 20170116e data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
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